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BSS131H6327XTSA1 Tech Specifications

BSS131H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 360mW Ta
Power Dissipation 360mW
FET Type N-Channel
Vgs(th) (Max) @ Id 1.8V @ 56μA
Input Capacitance (Ciss) (Max) @ Vds 77pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 13.7 ns
Threshold Voltage 1.4V
Max Dual Supply Voltage 240V
Dual Supply Voltage 240V
Nominal Vgs 1.4 V
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1997
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Voltage 240V
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.3 ns
Rds On (Max) @ Id, Vgs 14 Ω @ 100mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 110mA Ta
Rise Time 3.1ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 240V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 4.2 pF
Width 3.05mm
REACH SVHC No SVHC
Lead Free Lead Free
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BSS131H6327XTSA1 Documents

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