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BSS159NH6327XTSA2 Tech Specifications

BSS159NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2001
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Pin Count 3
Number of Channels 1
Element Configuration Single
Turn On Delay Time 3.1 ns
Rds On (Max) @ Id, Vgs 3.5 Ω @ 160mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Rise Time 2.9ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Feature Depletion Mode
Height 1.1mm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 360mW Ta
Power Dissipation 360mW
FET Type N-Channel
Vgs(th) (Max) @ Id 2.4V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Turn-Off Delay Time 9 ns
Threshold Voltage -2.8V
Max Dual Supply Voltage 60V
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 5.9 pF
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BSS159NH6327XTSA2 Documents

Download datasheets and manufacturer documentation for BSS159NH6327XTSA2

  • Datasheets

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