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BSS169H6327XTSA1 Tech Specifications

BSS169H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Turn On Delay Time 2.9 ns
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Rise Time 2.7ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 170mA
Max Dual Supply Voltage 100V
FET Feature Depletion Mode
Height 1mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory FET General Purpose Powers
Terminal Position DUAL
Pin Count 3
Power Dissipation-Max 360mW Ta
Power Dissipation 360mW
FET Type N-Channel
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 68pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 7V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Turn-Off Delay Time 11 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 6Ohm
Feedback Cap-Max (Crss) 7 pF
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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BSS169H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSS169H6327XTSA1

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