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BSS225H6327FTSA1 Tech Specifications

Trans MOSFET N-CH 600V 0.09A Automotive 4-Pin(3+Tab) SOT-89 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series SIPMOS®
Part Status Active
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 45 Ω @ 90mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 131pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 90mA
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Height 1.5mm
Width 2.5mm
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 600V
Terminal Form FLAT
Current Rating 90mA
Pin Count 3
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.3V @ 94μA
Current - Continuous Drain (Id) @ 25°C 90mA Ta
Rise Time 38ns
Vgs (Max) ±20V
Turn-Off Delay Time 62 ns
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.09A
Feedback Cap-Max (Crss) 4.4 pF
Length 4.5mm
RoHS Status ROHS3 Compliant
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