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BSS87H6327FTSA1 Tech Specifications

BSS87H6327FTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 1.8V @ 108μA
Current - Continuous Drain (Id) @ 25°C 260mA Ta
Rise Time 3.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 17.6 ns
Threshold Voltage 1.5V
Max Dual Supply Voltage 240V
Drain-source On Resistance-Max 6Ohm
Dual Supply Voltage 240V
Height 1.5mm
Width 2.5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code R-PDSO-F4
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
Turn On Delay Time 3.7 ns
Rds On (Max) @ Id, Vgs 6 Ω @ 260mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 97pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 27.3 ns
Continuous Drain Current (ID) 290mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.26A
Drain to Source Breakdown Voltage 240V
Nominal Vgs 1.5 V
Length 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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