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BSZ123N08NS3GATMA1 Tech Specifications

BSZ123N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.1W Ta 66W Tc
Power Dissipation 66W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 33μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 10A
Max Dual Supply Voltage 80V
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.3m Ω @ 20A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 10A Ta 40A Tc
Rise Time 18ns
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Gate to Source Voltage (Vgs) 20V
RoHS Status ROHS3 Compliant
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BSZ123N08NS3GATMA1 Documents

Download datasheets and manufacturer documentation for BSZ123N08NS3GATMA1

  • Datasheets

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