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BSZ160N10NS3GATMA1 Tech Specifications

MOSFET N-CH 100V 40A TSDSON-8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position DUAL
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.1W Ta 63W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 12μA
Current - Continuous Drain (Id) @ 25°C 8A Ta 40A Tc
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.016Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 80 mJ
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