BSZ22DN20NS3GATMA1 Tech Specifications

Trans MOSFET N-CH 200V 7A

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 34W Tc
Power Dissipation 34W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 225m Ω @ 3.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 4ns
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Avalanche Energy Rating (Eas) 30 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 13μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 7A
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.225Ohm
RoHS Status ROHS3 Compliant
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