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BTS7904BATMA1 Tech Specifications

Trans MOSFET N/P-CH 55V/30V 40A 6-Pin(5+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Obsolete
Number of Terminations 5
Terminal Position SINGLE
JESD-30 Code R-PSSO-G5
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
FET Type N and P-Channel
Vgs(th) (Max) @ Id 2.2V @ 40μA
Current - Continuous Drain (Id) @ 25°C 40A
Drain to Source Voltage (Vdss) 55V 30V
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 200 mJ
FET Feature Logic Level Gate
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 69W 96W
Rds On (Max) @ Id, Vgs 11.7m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 121nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.0202Ohm
DS Breakdown Voltage-Min 55V
FET Technology METAL-OXIDE SEMICONDUCTOR
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BTS7904BATMA1 Documents

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