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BUZ30AH3045AATMA1 Tech Specifications

Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 125W Tc
Power Dissipation 125W
Turn On Delay Time 30 ns
Rds On (Max) @ Id, Vgs 130m Ω @ 13.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 21A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 90 ns
Continuous Drain Current (ID) 21A
Max Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 450 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Rise Time 70ns
Vgs (Max) ±20V
Turn-Off Delay Time 250 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 84A
RoHS Status ROHS3 Compliant
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