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BUZ30AHXKSA1 Tech Specifications

Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 125W Tc
Power Dissipation 125W
Rds On (Max) @ Id, Vgs 130m Ω @ 13.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 21A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 84A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Rise Time 70ns
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 450 mJ
RoHS Status ROHS3 Compliant
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