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BUZ31H3046XKSA1 Tech Specifications

MOSFET N-CH 200V 14.5A TO262-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 95W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Rise Time 50ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 14.5A
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 200 mJ
Length 10.36mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Power Dissipation-Max 95W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 14.5A Tc
Drive Voltage (Max Rds On,Min Rds On) 5V
Turn-Off Delay Time 150 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 58A
Height 9.45mm
Width 4.52mm
Lead Free Lead Free
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