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DDB2U50N08W1RB23BOMA2 Tech Specifications

IGBT MOD DIODE BRIDGE EASY1B-2-1

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case Module
Transistor Element Material SILICON
Part Status Active
Number of Terminations 9
Terminal Position UPPER
JESD-30 Code R-XUFM-X9
Configuration 2 Independent
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 60A
Pulsed Drain Current-Max (IDM) 100A
FET Technology METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Cies) @ Vce 14nF @ 25V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Input Standard
Drain-source On Resistance-Max 0.2Ohm
DS Breakdown Voltage-Min 600V
NTC Thermistor No
RoHS Status ROHS3 Compliant
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