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DF200R12KE3HOSA1 Tech Specifications

IGBT MODULE VCES 1200V 200A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Number of Pins 5
Operating Temperature -40°C~125°C
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
Number of Elements 1
Power Dissipation 1.04kW
Power - Max 1040W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 5mA
Collector Emitter Saturation Voltage 1.7V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
NTC Thermistor No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2012
Part Status Active
Number of Terminations 5
Terminal Position UPPER
Pin Count 5
Configuration Single
Case Connection ISOLATED
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 295A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Turn Off Time-Nom (toff) 830 ns
Input Capacitance (Cies) @ Vce 14nF @ 25V
Lead Free Lead Free
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