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FD1000R17IE4BOSA2 Tech Specifications

IGBT MODULE VCES 1700V 1000A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 50 Weeks
Mounting Type Chassis Mount
Number of Pins 12
Operating Temperature -40°C~150°C
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 12
Number of Elements 1
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
NTC Thermistor Yes
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Part Status Active
Number of Terminations 12
Max Power Dissipation 6.25kW
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration Single
Power - Max 6250W
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 1.39kA
Collector Emitter Breakdown Voltage 1.7kV
Turn On Time 720 ns
Turn Off Time-Nom (toff) 1890 ns
Input Capacitance (Cies) @ Vce 81nF @ 25V
RoHS Status RoHS Compliant
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