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FD200R12KE3HOSA1 Tech Specifications

IGBT MODULE VCES 1200V 200A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Package / Case Module
Transistor Element Material SILICON
Published 2012
Part Status Active
Number of Terminations 5
Terminal Position UPPER
Pin Count 5
Number of Elements 1
Case Connection ISOLATED
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 14nF @ 25V
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~125°C
Pbfree Code yes
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X5
Configuration Single Chopper
Power - Max 1050W
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 5mA
Turn On Time 400 ns
Turn Off Time-Nom (toff) 830 ns
NTC Thermistor No
RoHS Status Non-RoHS Compliant
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FD200R12KE3HOSA1 Documents

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