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FP100R07N3E4B11BOSA1 Tech Specifications

IGBT MODULE VCES 600V 100A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Number of Pins 43
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 43
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 7
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Current - Collector (Ic) (Max) 100A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 100A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 6.2nF @ 25V
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Power - Max 335W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Turn On Time 100 ns
Turn Off Time-Nom (toff) 370 ns
NTC Thermistor Yes
RoHS Status RoHS Compliant
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FP100R07N3E4B11BOSA1 Documents

Download datasheets and manufacturer documentation for FP100R07N3E4B11BOSA1

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