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FP10R06W1E3BOMA1 Tech Specifications

IGBT MODULE VCES 600V 100A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Number of Pins 23
Operating Temperature -40°C~150°C
Pbfree Code no
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 23
Number of Elements 7
Power Dissipation 68W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Saturation Voltage 2V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 550pF @ 25V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Part Status Active
Number of Terminations 23
Max Power Dissipation 68W
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration Three Phase Inverter
Case Connection ISOLATED
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 16A
Collector Emitter Breakdown Voltage 600V
Turn On Time 26 ns
Turn Off Time-Nom (toff) 260 ns
NTC Thermistor Yes
REACH SVHC No SVHC
Lead Free Contains Lead
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