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FP10R12W1T4B11BOMA1 Tech Specifications

Trans IGBT Module N-CH 1200V 20A 105000mW 23-Pin EASY1B-2 Tray

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Package / Case Module
Number of Pins 23
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 23
Max Power Dissipation 105W
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.85V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector (Ic) (Max) 20A
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
NTC Thermistor Yes
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 7
Case Connection ISOLATED
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 108 ns
Turn Off Time-Nom (toff) 500 ns
Input Capacitance (Cies) @ Vce 600pF @ 25V
RoHS Status RoHS Compliant
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