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FP50R06W2E3B11BOMA1 Tech Specifications

IGBT MODULE 600V 65A 175W

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Number of Pins 23
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 23
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 7
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Current - Collector Cutoff (Max) 1mA
Turn On Time 45 ns
Turn Off Time-Nom (toff) 355 ns
NTC Thermistor Yes
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Power - Max 175W
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 65A
Current - Collector (Ic) (Max) 65A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
Lead Free Contains Lead
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