FS200R07N3E4RBOSA1 Tech Specifications

IGBT MODULE VCES 600V 200A

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Number of Pins 35
Manufacturer Package Identifier FS200R07N3E4RBOSA1
Published 2002
Part Status Active
Number of Terminations 35
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 35
Configuration Three Phase Inverter
Turn On Delay Time 150 ns
Halogen Free Not Halogen Free
Input Standard
Collector Emitter Voltage (VCEO) 650V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Saturation Voltage 1.55V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 200A
Continuous Collector Current 200A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Pbfree Code no
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 6
Power Dissipation 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 340 ns
Max Collector Current 200A
Collector Emitter Breakdown Voltage 650V
Turn On Time 210 ns
Max Junction Temperature (Tj) 150°C
Turn Off Time-Nom (toff) 450 ns
NTC Thermistor Yes
Height 17.5mm
Lead Free Contains Lead
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