FZ1200R17HP4B2BOSA2 Tech Specifications

IGBT MOD 1700V 1200A 7800W

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 24 Weeks
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Position UPPER
JESD-30 Code R-PUFM-X7
Configuration Half Bridge
Power - Max 7800W
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 850 ns
Turn Off Time-Nom (toff) 1810 ns
NTC Thermistor No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 7
Terminal Form UNSPECIFIED
Number of Elements 2
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 5mA
Current - Collector (Ic) (Max) 1200A
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 1200A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 97nF @ 25V
Lead Free Contains Lead
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