IFS100B12N3E4_B39 Tech Specifications

IGBT MOD 1200V 100A 515W

Product Attribute Attribute Value
Category Discrete Semiconductors / IGBTs Modules
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature 175°C TJ
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
Pin Count 34
Qualification Status Not Qualified
Configuration Three Phase Inverter
Power - Max 515W
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 100A
Turn On Time 210 ns
Turn Off Time-Nom (toff) 610 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.3nF @ 25V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case Module
Transistor Element Material SILICON
Published 2009
Part Status Obsolete
Number of Terminations 34
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X34
Number of Elements 6
Case Connection ISOLATED
Transistor Application POWER CONTROL
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Power Dissipation-Max (Abs) 515W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
IGBT Type Trench Field Stop
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.1 V
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