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IGW30N60TFKSA1 Tech Specifications

IGW30N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature FAST SWITCHING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Base Part Number *GW30N60
JESD-30 Code R-PSFM-T3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 187W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Switching Energy 1.46mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
JEDEC-95 Code TO-247AC
Current - Collector (Ic) (Max) 60A
Test Condition 400V, 30A, 10.6 Ω, 15V
Turn Off Time-Nom (toff) 382 ns
Gate Charge 167nC
Td (on/off) @ 25°C 23ns/254ns
RoHS Status ROHS3 Compliant
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IGW30N60TFKSA1 Documents

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