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IGW30N60TPXKSA1 Tech Specifications

IGBT 600V 53A 200W TO247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™
Pbfree Code yes
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE
Power - Max 200W
Polarity/Channel Type N-CHANNEL
Max Collector Current 53A
Turn On Time 38 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Switching Energy 710μJ (on), 420μJ (off)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.8V
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 30A, 10.5 Ω, 15V
Turn Off Time-Nom (toff) 279 ns
Gate Charge 130nC
Td (on/off) @ 25°C 15ns/179ns
RoHS Status ROHS3 Compliant
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