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IGW40N65F5FKSA1 Tech Specifications

IGBT Transistors IGBT PRODUCTS

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 255W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation 255W
Polarity/Channel Type N-CHANNEL
Max Collector Current 74A
Collector Emitter Saturation Voltage 1.6V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Current - Collector Pulsed (Icm) 120A
Switching Energy 360μJ (on), 100μJ (off)
Gate-Emitter Thr Voltage-Max 4.8V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Collector Emitter Voltage (VCEO) 1.6V
Collector Emitter Breakdown Voltage 650V
Test Condition 400V, 20A, 15 Ω, 15V
Gate Charge 95nC
Td (on/off) @ 25°C 19ns/160ns
Gate-Emitter Voltage-Max 20V
REACH SVHC Unknown
Lead Free Lead Free
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IGW40N65F5FKSA1 Documents

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