IHD06N60RA Tech Specifications

IGBT 600V 12A 88W TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2012
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish MATTE TIN
Max Power Dissipation 88W
Peak Reflow Temperature (Cel) 260
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 12A
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 6A
IGBT Type Trench
Current - Collector Pulsed (Icm) 18A
Switching Energy 150μJ
Gate-Emitter Thr Voltage-Max 5.7V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Number of Elements 1
Case Connection COLLECTOR
Power - Max 88W
Halogen Free Not Halogen Free
Collector Emitter Voltage (VCEO) 600V
JEDEC-95 Code TO-252AA
Test Condition 400V, 6A, 14.7 Ω, 15V
Turn Off Time-Nom (toff) 325 ns
Gate Charge 42nC
Td (on/off) @ 25°C 25ns/125ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
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Part # Manufacturer Category Availability
IHD06N60RA International Rectifier (Infineon Technologies) Transistors - IGBTs - Single 2633

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