IHW25N120E1XKSA1 Tech Specifications

IGBT NPT/TRENCH 1200V 50A TO247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™
Pbfree Code yes
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Max Power Dissipation 231W
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 231W
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn Off Time-Nom (toff) 1677 ns
Gate Charge 147nC
Switching Energy 800μJ (off)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~150°C TJ
Published 2016
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2V
Collector Emitter Breakdown Voltage 1.2kV
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A
IGBT Type NPT and Trench
Current - Collector Pulsed (Icm) 75A
RoHS Status ROHS3 Compliant
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