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IHW30N110R3FKSA1 Tech Specifications

IGBT 1100V 60A 333W TO247-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2015
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.1kV
Collector Emitter Breakdown Voltage 1.1kV
Test Condition 600V, 30A, 15 Ω, 15V
Turn Off Time-Nom (toff) 470 ns
Gate Charge 180nC
Td (on/off) @ 25°C -/350ns
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 333W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Power - Max 333W
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1100V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 30A
IGBT Type Trench
Current - Collector Pulsed (Icm) 90A
Switching Energy 1.15mJ (off)
Gate-Emitter Thr Voltage-Max 6.4V
Lead Free Lead Free
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