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IHW40N120R3FKSA1 Tech Specifications

IGBT 1200V 80A 429W TO247-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 429W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 80A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 40A
Gate Charge 335nC
Td (on/off) @ 25°C -/336ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Element Configuration Single
Power - Max 429W
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Test Condition 600V, 40A, 7.5 Ω, 15V
IGBT Type Trench
Current - Collector Pulsed (Icm) 120A
Switching Energy 2.02mJ (off)
Gate-Emitter Thr Voltage-Max 6.4V
Lead Free Lead Free
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