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IKD04N60RF Tech Specifications

IGBT 600V 8A 75W TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -40°C~175°C TJ
Published 2012
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number *KD04N60
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 34ns
Current - Collector (Ic) (Max) 8A
Turn On Time 18 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A
IGBT Type Trench
Current - Collector Pulsed (Icm) 12A
Switching Energy 110μJ
Gate-Emitter Thr Voltage-Max 5.7V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 75W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 75W
Test Condition 400V, 4A, 43 Ω, 15V
Turn Off Time-Nom (toff) 216 ns
Gate Charge 27nC
Td (on/off) @ 25°C 12ns/116ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
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IKD04N60RF Documents

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