IKW50N60DTPXKSA1 Tech Specifications

IKW50N60DTP Series 600 V 80 A Through Hole Trench Field Stop IGBT - PG-TO247-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop™
Pbfree Code yes
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Max Power Dissipation 319.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power - Max 319.2W
Polarity/Channel Type N-CHANNEL
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 50A, 7 Ω, 15V
Turn Off Time-Nom (toff) 332 ns
Gate Charge 249nC
Td (on/off) @ 25°C 20ns/215ns
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Published 2016
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.8V
Reverse Recovery Time 115 ns
Turn On Time 55 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 150A
Switching Energy 1.53mJ (on), 850μJ (off)
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