IKW75N60H3FKSA1 Tech Specifications

Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Published 2005
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Power - Max 428W
Polarity/Channel Type N-CHANNEL
Max Collector Current 80A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 75A, 5.2 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 225A
Switching Energy 3mJ (on), 1.7mJ (off)
Length 15.87mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series TrenchStop®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 428W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 190 ns
Collector Emitter Saturation Voltage 2.3V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Gate Charge 470nC
Td (on/off) @ 25°C 31ns/265ns
Height 20.7mm
Width 5.31mm
Lead Free Lead Free
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