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IPA60R600P7SXKSA1 Tech Specifications

MOSFET N-CHANNEL 600V 6A TO220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ P7
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 21W Tc
Case Connection ISOLATED
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 80μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 17 mJ
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