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IPA65R280C6XKSA1 Tech Specifications

MOSFET N-CH 650V 13.8A TO220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220 Full Pack
Packaging Tube
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Power Dissipation-Max 32W Tc
Power Dissipation 32W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 440μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Turn-Off Delay Time 105 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 950pF
Rds On Max 280 mΩ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Part Status Not For New Designs
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Element Configuration Single
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 13.8A
Drain to Source Breakdown Voltage 700V
Drain to Source Resistance 280mOhm
Radiation Hardening No
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