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IPA80R1K0CEXKSA2 Tech Specifications

MOSFET N-CH 800V TO-220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ CE
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 32W Tc
Power Dissipation 32W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.95Ohm
Avalanche Energy Rating (Eas) 230 mJ
Height 19.6mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -40°C~150°C TJ
Published 1997
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950m Ω @ 3.6A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 72 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 800V
Drain to Source Breakdown Voltage 800V
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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IPA80R1K0CEXKSA2 Documents

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