IPB010N06NATMA1 Tech Specifications

IPB010N06NATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2006
Part Status Active
Max Operating Temperature 175°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 300W Tc
Turn On Delay Time 37 ns
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 45A Ta 180A Tc
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 180A
Max Dual Supply Voltage 60V
Drain to Source Resistance 800μOhm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Supplier Device Package PG-TO263-7
Packaging Cut Tape (CT)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Elements 1
Power Dissipation 300W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 208nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 74 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
REACH SVHC No SVHC
Lead Free Contains Lead
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IPB010N06NATMA1 Documents

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