IPB020N10N5ATMA1 Tech Specifications

IPB020N10N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 26ns
Vgs (Max) ±20V
Turn-Off Delay Time 77 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Published 2013
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 33 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.8V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 29 ns
Continuous Drain Current (ID) 120A
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 979 mJ
Lead Free Contains Lead
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