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IPB031NE7N3GATMA1
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IPB031NE7N3GATMA1 Tech Specifications
Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | Infineon Technologies |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 13 Weeks |
Mounting Type | Surface Mount |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Series | OptiMOS™ |
Pbfree Code | no |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Reach Compliance Code | not_compliant |
Pin Count | 4 |
Qualification Status | Not Qualified |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3.1m Ω @ 100A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8130pF @ 37.5V |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
Drain to Source Voltage (Vdss) | 75V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 40 ns |
Gate to Source Voltage (Vgs) | 20V |
DS Breakdown Voltage-Min | 75V |
RoHS Status | ROHS3 Compliant |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mount | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C~175°C TJ |
Published | 2008 |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 214W Tc |
Power Dissipation | 214W |
Turn On Delay Time | 16 ns |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 3.8V @ 155μA |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Rise Time | 85ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 10 ns |
Continuous Drain Current (ID) | 100A |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 640 mJ |
IPB031NE7N3GATMA1 Documents
Download datasheets and manufacturer documentation for IPB031NE7N3GATMA1
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Datasheets
Others include "IPB03" parts
The following parts include 'IPB03'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
IPB030N08N3 G | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 9367 |
IPB030N08N3G | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 68 |
IPB030N08N3G MOS | International Rectifier (Infineon Technologies) | Specialized Hot ICs | 1544 |
IPB030N08N3GATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 1378 |
IPB030N08N3GATMA1 | Infineon Technologies | Single MOSFETs Transistors | |
IPB031N08N5ATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 16928 |
IPB031NE7N3 G | INFINEON | Specialized Hot ICs | 18802 |
IPB031NE7N3G | INF | Specialized Hot ICs | 619 |
IPB031NE7N3GATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 15824 |
IPB032N10N5ATMA1 | International Rectifier (Infineon Technologies) | Transistors - FETs, MOSFETs - Single | 2136 |
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IPB031NE7N3GATMA1 brand manufacturers: Infineon Technologies, Bonchip stock, IPB031NE7N3GATMA1 reference price. IPB031NE7N3GATMA1 parameters, IPB031NE7N3GATMA1 Datasheet PDF and pin diagram description download.You can use the IPB031NE7N3GATMA1 Pluggable Connectors, DSP Datesheet PDF, find IPB031NE7N3GATMA1 pin diagram and circuit diagram and usage method of function, IPB031NE7N3GATMA1 electronics tutorials.You can download from the Bonchip.
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