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IPB073N15N5ATMA1 Tech Specifications

IPB073N15N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™-5
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3m Ω @ 57A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Drain Current-Max (Abs) (ID) 114A
Pulsed Drain Current-Max (IDM) 456A
Avalanche Energy Rating (Eas) 130 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 214W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.6V @ 160μA
Current - Continuous Drain (Id) @ 25°C 114A Tc
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0073Ohm
DS Breakdown Voltage-Min 150V
RoHS Status ROHS3 Compliant
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IPB073N15N5ATMA1 Documents

Download datasheets and manufacturer documentation for IPB073N15N5ATMA1

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