IPB117N20NFDATMA1 Tech Specifications

IPB117N20NFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 300W
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 11.7m Ω @ 84A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 84A Tc
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Threshold Voltage 3V
Max Dual Supply Voltage 200V
Max Junction Temperature (Tj) 175°C
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.946308g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 6650pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 84A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Height 4.82mm
RoHS Status ROHS3 Compliant
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IPB117N20NFDATMA1 Documents

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