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IPB320N20N3GATMA1 Tech Specifications

Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Power Dissipation-Max 136W Tc
Power Dissipation 136W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 90μA
Current - Continuous Drain (Id) @ 25°C 34A Tc
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 34A
DS Breakdown Voltage-Min 200V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32m Ω @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
Turn-Off Delay Time 21 ns
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
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