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IPB407N30NATMA1 Tech Specifications

MOSFET N-CH TO263-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 40.7m Ω @ 44A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 44A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 43 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0407Ohm
Avalanche Energy Rating (Eas) 240 mJ
Height 4.7mm
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 7180pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 44A
Max Dual Supply Voltage 300V
Drain to Source Breakdown Voltage 300V
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
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IPB407N30NATMA1 Documents

Download datasheets and manufacturer documentation for IPB407N30NATMA1

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