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IPB45N06S409ATMA2 Tech Specifications

MOSFET N-CH 60V 45A TO263-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.946308g
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 34μA
Current - Continuous Drain (Id) @ 25°C 45A Tc
Rise Time 40ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 97 mJ
Length 10mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Turn On Delay Time 15 ns
Rds On (Max) @ Id, Vgs 9.4m Ω @ 45A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3785pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 45A
Max Dual Supply Voltage 60V
Height 4.4mm
Width 9.25mm
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