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IPB47N10SL26ATMA1 Tech Specifications

Trans MOSFET N-CH 100V 47A Automotive 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Part Status Last Time Buy
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 50 ns
Rds On (Max) @ Id, Vgs 26m Ω @ 33A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 47A Tc
Rise Time 100ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 47A
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 400 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2001
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 175W Tc
Power Dissipation 175W
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 70 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.04Ohm
RoHS Status ROHS3 Compliant
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