IPB80N06S2L11ATMA2 Tech Specifications

MOSFET N-CH 55V 80A TO263-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 158W
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 10.7m Ω @ 40A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 32ns
Vgs (Max) ±20V
Turn-Off Delay Time 46 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0147Ohm
Avalanche Energy Rating (Eas) 280 mJ
Length 10mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 2
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 158W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 93μA
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 80A
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Height 4.4mm
Width 9.25mm
Lead Free Contains Lead
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