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IPD025N06NATMA1 Tech Specifications

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 167W Tc
Power Dissipation 3W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.8V @ 95μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 26A
Drain to Source Breakdown Voltage 60V
Height 2.5mm
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 90A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 90A Tc
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
JEDEC-95 Code TO-252AA
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0025Ohm
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
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IPD025N06NATMA1 Documents

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