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IPD038N06N3GATMA1 Tech Specifications

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 90A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 90A Tc
Rise Time 70ns
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
JEDEC-95 Code TO-252AA
Max Dual Supply Voltage 60V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 188W Tc
Power Dissipation 188W
Turn On Delay Time 30 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 165 mJ
Lead Free Contains Lead
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