IPD12CN10NGATMA1 Tech Specifications

Trans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Additional Feature FAST SWITCHING
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.4m Ω @ 67A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 67A Tc
Rise Time 21ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0124Ohm
Pulsed Drain Current-Max (IDM) 268A
REACH SVHC No SVHC
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 67A
JEDEC-95 Code TO-252AA
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 154 mJ
RoHS Status ROHS3 Compliant
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