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IPD15N06S2L64ATMA1 Tech Specifications

MOSFET N-CH 55V 19A TO252-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 14μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.085Ohm
DS Breakdown Voltage-Min 55V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 2
Additional Feature ULTRA LOW RESISTANCE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 47W Tc
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 64m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 354pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 19A
Pulsed Drain Current-Max (IDM) 76A
RoHS Status RoHS Compliant
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